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DMN32D2LV
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
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Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
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Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
SOT-563
D 2
S 2
G 1
G 2
S 1
D 1
ESD PROTECTED
Ordering Information (Note 4)
Part Number
DMN32D2LV-7
TOP VIEW
Case
SOT-563
TOP VIEW
Schematic and Transistor Diagram
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
D 2
G 1
S 1
DV = Product Type Marking Code (See Note 6)
DV YM
YM = Date Code Marking
Y = Year (ex: U = 2007)
S 2
G 2
D 1
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN32D2LV
Document number: DS31121 Rev. 7 - 2
1 of 6
www.diodes.com
January 2014
? Diodes Incorporated
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